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Volumn 176, Issue 1, 1999, Pages 67-71

Dielectric Bragg mirrors for InGaN surface-emitting lasers

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL MICROSTRUCTURE; ELECTRON MICROSCOPY; EPITAXIAL GROWTH; MASS SPECTROMETRY; MIRRORS; NITRIDES; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICA; X RAY CRYSTALLOGRAPHY; ZIRCONIA;

EID: 0342936466     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-396X(199911)176:1<67::AID-PSSA67>3.0.CO;2-L     Document Type: Article
Times cited : (8)

References (9)
  • 3
    • 0342365823 scopus 로고    scopus 로고
    • British Patent Appl. 9807692.0 (Apr. 1998)
    • M. D. DAWSON and R. W. MARTIN, British Patent Appl. 9807692.0 (Apr. 1998).
    • Dawson, M.D.1    Martin, R.W.2
  • 4
    • 0032297066 scopus 로고    scopus 로고
    • Orlando (FL), Dec. Inst. of Electrical and Electronics Engineers Inc. (cat. no. 98ch36243)
    • T. SAKAGUCHI et al., Proc. 11th IEEE/LEOS Annu. Meeting, Orlando (FL), Dec. 1998, Vol. 1, (p. 34): Inst. of Electrical and Electronics Engineers Inc. (cat. no. 98ch36243).
    • (1998) Proc. 11th IEEE/LEOS Annu. Meeting , vol.1 , pp. 34
    • Sakaguchi, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.