Deep etch of GaP using high-density plasma for light-emitting diode applications

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 3, 2002, Pages 902-908

  Wuu, D S ^a   Chung, C R ^b   Liu, Y H ^b   Horng, R H ^a   Huang, S H ^a  

^a NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^b DA YEH UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ETCHING; INDUCTIVELY COUPLED PLASMA; LEAKAGE CURRENTS; LIGHT EMITTING DIODES; SURFACE ROUGHNESS;

DEEP ETCHING;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035998509     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1475983     Document Type: Conference Paper

References (18)