|
Volumn 83, Issue 12, 1998, Pages 7678-7684
|
Degradation of commercial high-brightness GaP:N green light emitting diodes
|
Author keywords
[No Author keywords available]
|
Indexed keywords
DEEP LEVEL TRANSIENT SPECTROSCOPY;
DEGRADATION;
ELECTRIC CURRENTS;
ELECTROLUMINESCENCE;
OPTICAL VARIABLES MEASUREMENT;
PHOSPHORUS;
SEMICONDUCTING GALLIUM COMPOUNDS;
SILICON;
CURRENT STRESS;
ELECTROLUMINESCENCE EFFICIENCY;
ELECTROLUMINESCENCE SPECTRA;
ELECTRON TRAP;
LIGHT OUTPUT;
NITROGEN PAIR;
RECOMBINATION ENHANCED DEFECT REACTION;
LIGHT EMITTING DIODES;
|
EID: 0032096876
PISSN: 00218979
EISSN: None
Source Type: Journal
DOI: 10.1063/1.367889 Document Type: Article |
Times cited : (12)
|
References (21)
|