Improved GaNxAs1-x quality grown by molecular beam epitaxy with dispersive nitrogen source

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 4, 2002, Pages 1364-1367

  Wang, S Z ^a   Yoon, S F ^a   Loke, W K ^a   Ng, T K ^a   Fan, W J ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL MODIFICATION; INTERFACES (MATERIALS); ION BOMBARDMENT; MOLECULAR BEAM EPITAXY; NITROGEN; OPTOELECTRONIC DEVICES; PARTICLE BEAMS; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION;

DISPERSIVE NITROGEN SOURCE; DISPERSIVE PLASMA ACTIVATED NITROGEN TECHNIQUE; GALLIUM NITRIDE ARSENIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035982540     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1490391     Document Type: Conference Paper

References (13)