Artificial substrates for n- and p-type SiGe heterostructure field-effect transistors

Thin Solid Films

Volumn 321, Issue 1-2, 1998, Pages 136-140

  Hackbarth, T ^a   Kibbel, H ^a   Glueck, M ^a   Hoeck, G ^a   Herzog, H J ^a  

^a DAIMLER AG   (Germany)

Author keywords

Relaxed buffers; Sige MODFETS; Surface roughness

Indexed keywords

CRYSTAL STRUCTURE; FIELD EFFECT TRANSISTORS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; MOS DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE ROUGHNESS;

MODULATION DOPED FIELD EFFECT TRANSISTORS (MODFET); RELAXED BUFFERS; SILICON GERMANIUM;

HETEROJUNCTIONS;

EID: 0032064719     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00462-3     Document Type: Article

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