Interfacial reactions in the formation of ohmic contacts to wide bandgap semiconductors

Applied Surface Science

Volumn 117-118, Issue , 1997, Pages 362-372

  Holloway, P H ^a   Kim, T J ^a   Trexler, J T ^a   Miller, S ^a   Fijol, J J ^a   Lampert, W V ^b   Haas, T W ^b  

^a UNIVERSITY OF FLORIDA   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

GaN; Ohmic contacts; Widegap semiconductor; ZnSe

Indexed keywords

ELECTRIC FIELDS; ELECTRIC RESISTANCE; ENERGY GAP; FERMI LEVEL; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

BANDGAP SEMICONDUCTORS; CONTACT RESISTANCE;

OHMIC CONTACTS;

EID: 0031548276     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(97)80109-2     Document Type: Article

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