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Volumn 62, Issue 19, 2000, Pages 12882-12887
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Band-gap shift of the heavily doped single- and double-donor systems Si:Bi and Si:P,Bi
a
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Author keywords
[No Author keywords available]
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Indexed keywords
BISMUTH DERIVATIVE;
ION;
PHOSPHORUS DERIVATIVE;
SILICON DERIVATIVE;
ARTICLE;
CALCULATION;
CONDUCTANCE;
ELECTRON;
INTERMETHOD COMPARISON;
LIGHT;
MEASUREMENT;
SEMICONDUCTOR;
TEMPERATURE;
THEORY;
VALIDATION PROCESS;
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EID: 0034668615
PISSN: 01631829
EISSN: None
Source Type: Journal
DOI: 10.1103/PhysRevB.62.12882 Document Type: Article |
Times cited : (9)
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References (27)
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