Electrical properties of cubic InN and GaN epitaxial layers as a function of temperature

MRS Internet Journal of Nitride Semiconductor Research

Volumn 5, Issue SUPPL. 1, 2000, Pages

  Fernandez, J R L ^a   Chitta, V A ^b   Abramof, E ^c   Da Silva, A Ferreira ^c   Leite, J R ^a   Tabata, A ^a   As, D J ^d   Frey, T ^e   Schikora, D ^e   Lischka, K ^e  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b UNIVERSIDADE SÃO FRANCISCO   (Brazil)

^c INSTITUTO NACIONAL DE PESQUISAS ESPACIAIS   (Brazil)

^d UNIVERSITY OF PADERBORN   (Germany)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MOLECULAR BEAM EPITAXY; SCATTERING; THERMAL EFFECTS;

ELECTRON CONCENTRATION; REACTIVE NITROGEN; SCATTERING MECHANISMS;

INDIUM COMPOUNDS;

EID: 3242768391     PISSN: 10925783     EISSN: None     Source Type: Journal    
DOI: 10.1557/s1092578300004300     Document Type: Conference Paper

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