Mixed mode 4H -SiC SIT as an S-band microwave power transistor

Annual Device Research Conference Digest

Volumn , Issue , 1996, Pages 62-63

  Clarke, R C ^a   Agarwal, A K ^a   Siergiej, R R ^a   Brandt, C D ^a   Morse, A W ^a  

^a NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; FREQUENCY RESPONSE; MICROWAVE DEVICES; OHMIC CONTACTS; REACTIVE ION ETCHING; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE; THERMAL CONDUCTIVITY; TRANSCONDUCTANCE;

BIAS VOLTAGE; DRAIN CONTACT; ELECTRON MOBILITY; HEAT EXTRACTION; MICROWAVE POWER TRANSISTOR; S BAND FREQUENCIES; SCHOTTKY BARRIER; STATIC INDUCTION TRANSISTOR;

TRANSISTORS;

EID: 0029701019     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/drc.1996.546316     Document Type: Conference Paper

References (4)