Device applications of AlGaAs/GaAs quantum well semiconductor structures grown by MBE

Electron Technology (Warsaw)

Volumn 29, Issue 2-3, 1996, Pages 131-138

  Kaniewska, M ^a   Reginski, K ^a   Muszalski, J ^a   Krynska, D ^a   Litkowiec, A ^a   Bugajski, M ^a  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; ELECTRIC RESISTANCE; HETEROJUNCTIONS; LASER MODES; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DIODES; SEMICONDUCTOR GROWTH;

DOUBLE BARRIER RESONANT TUNNELING (DBRT) DIODE STRUCTURES;

QUANTUM WELL LASERS;

EID: 0030389297     PISSN: 00709816     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (14)