Etching characteristics and plasma-induced damage of high-k Ba0.5Sr0.5TiO3 thin-film capacitors

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 6, 2001, Pages 2231-2236

  Wuu, D S ^a   Lin, C C ^b   Horng, R H ^b   Liao, F C ^c   Liu, Y H ^c  

^a National Chunng Hsing University   (Taiwan)

^b NATIONAL CHUNG HSING UNIVERSITY   (Taiwan)

^c DA YEH UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; BARIUM COMPOUNDS; CHEMICAL ANALYSIS; CHLORINE; CURRENT DENSITY; ELECTRIC PROPERTIES; INDUCTIVELY COUPLED PLASMA; PERMITTIVITY; PLASMA ETCHING; PRESSURE; SUBSTRATES; THIN FILMS;

CHAMBER PRESSURE; LANGMUIR PROBE; PLASMA INDUCED DAMAGE; SUBSTRATE BIAS RF POWER;

CAPACITORS;

EID: 0035519151     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1420205     Document Type: Article

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