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Volumn 32, Issue 1-4 SPEC. ISS., 1996, Pages 241-253

Dry etching and induced damage

Author keywords

Damage; Dry etching; Electrical characterisation; Nanotechnology; Plasma; Surface analysis

Indexed keywords

ELECTRON BEAMS; ION BOMBARDMENT; NANOTECHNOLOGY; PLASMAS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GERMANIUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS;

EID: 0030234312     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00175-1     Document Type: Article
Times cited : (18)

References (67)
  • 7
    • 30244540076 scopus 로고
    • J.J. Pouch and S.A. Alterovitz (eds.), Material Science Forum Series, Trans tech., Switzerland
    • R. Cheung, in: J.J. Pouch and S.A. Alterovitz (eds.), Plasma Processing of Materials, Material Science Forum Series, Trans tech., Switzerland, 1993, p. 619.
    • (1993) Plasma Processing of Materials , pp. 619
    • Cheung, R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.