SCOPUS 정보 검색 플랫폼

Nanotechnology

Volumn 10, Issue 2, 1999, Pages 122-126

Self-organized growth of Ge quantum dots on Si(001) substrates induced by sub-monolayer C coverages

(6) Leifeld, O a,b Hartmann, R b Muller E b Kaxiras, E c Kern, K a Grutzmacher D b

a EPFL (Switzerland)

b PAUL SCHERRER INSTITUTE (Switzerland)

c HARVARD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; CRYSTAL ORIENTATION; DEPOSITION; MONOLAYERS; PHOTOLUMINESCENCE; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SEMICONDUCTOR GROWTH; SUBSTRATES; SURFACE ROUGHNESS; TRANSMISSION ELECTRON MICROSCOPY;

SELF-ORGANIZED GROWTH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032679697 PISSN: 09574484 EISSN: None Source Type: Journal
DOI: 10.1088/0957-4484/10/2/303 Document Type: Article

Times cited : (36)

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