Dislocation structure of growth hillocks in homoepitaxial GaN

Physica Status Solidi (B) Basic Research

Volumn 216, Issue 1, 1999, Pages 649-654

  Nowak, G ^a   Pakula K ^b   Grzegory, I ^a   Weyher, J L ^a,c   Porowski, S ^a  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b UNIVERSITY OF WARSAW   (Poland)

^c RADBOUD UNIVERSITY NIJMEGEN   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0033229564     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1521-3951(199911)216:1<649::AID-PSSB649>3.0.CO;2-X     Document Type: Article

References (13)

1. H. TEISSEYRE, M. LESZCZYNSKI, T. SUSKI, I. GRZEGORY, M. BOCKOWSKI, J. JUN, S. POROWSKI, K. PAKULA, J.L. ROBERT, B. BEAUMONT, P. GIBART, M. VAILLE, and J.P. FAURLE, Semicond. Sci, Technol. 12, 240 (1997).
2. M. MAYER, A. PELZMANN, M. KAMP, K.J. EBELING, H. TEISSEYRE, G. NOWAK, M. LESZCZYNSKI, I. GRZEGORY, S. POROWSKI, and G. KARCZEWSKI, Jpn. J. Appl. Phys. 36, L1634 (1997).
3. J.L. WEYHER, A.R.A. ZAUNER, P.D. BROWN, F. KAROUTA, A. BARCZ, M. WOJDAK, and S. POROWSKI, Proc. 3rd Internat. Conf. Nitride Semiconductors, Montpellier, July 5 to 9, 1999; phys. stat. sol. (a) 176, 573 (1999).
4. J.L. WEYHER, A.R.A. ZAUNER, P.D. BROWN, F. KAROUTA, A. BARCZ, M. WOJDAK, and S. POROWSKI, Proc. 3rd Internat. Conf. Nitride Semiconductors, Montpellier, July 5 to 9, 1999; phys. stat. sol. (a) 176, 573 (1999).
5. R. HELD, G. NOWAK, B.E. ISHAUG, S.M. SEUTTER, A. PARKHOMOVSKY, A.M. DABIRAM, P.I. COHEN, I. GRZEGORY, and S. POROWSKI, J. Appl. Phys. 85, 7697 (1999).
6. C.T. FOXON, T.S. CHENG, D. KORAKAKIS, S.V. NOVIKOV, R.P. CAMPION, I. GRZEGORY, S. POROWSKI, M. ALBRECHT, and H.P. STRUNK, MRS Internet J. Nitride Semicond. Res. 4S1, G4.11 (1999).
7. I. GRZEGORY, M. BOCKOWSKI, B. LUCZNIK, M. WROBLEWSKI, S. KRUKOWSKI, J.L. WEYHER, G. NOWAK, T. SUSKI, M. LESZCZYNSKI, H. TEISSEYRE, E. LITWIN-STASZEWSKA, and S. POROWSKI, MRS Symp. Proc. 482 (1998).
8. J.L. WEYHER, S. MÜLLER, I. GRZEGORY, and S. POROWSKI, J. Cryst. Growth 182, 17 (1997).
9. D. HULL and D.J. BACON, Introduction to Dislocations, International Series on Materials Science and Technology, Pergamon Press, London/Oxford 1984.
10. P. BENNEMA, J. Cryst. Growth 1, 278 (1967).
11. J.L. WEYHER, P.D. BROWN, R.A. ZAUNER, S. MÜLLER, C.B. BOOTHROYD, D.T. FOORD, P.R. HAGEMAN, C.J. HUMPHREYS, P.K. LARSEN, I. GRZEGORY, and S. POROWSKI, J. Cryst. Growth, in press.
12. A.R. SMITH, V. RAMACHANDRAN, R.M. FEENSTRA, D.W. GREVE, M.S. SHIN, M. SKOWRONSKI, J. NEUGEBAUER, and J.E. NORTHRUP, J. Vac. Sci. Technol. A 16, 1641 (1998).
13. P.J. HANSEN, Y.E. STRAUSSER, A.N. ERICKSON, E.J. TARSA, P. KOZODOY, E.G. BRAZEL, J.P. IBBETSON, U. MISHRA, V. NARAYANAMURTI, S.P. DENBAARS, and J.S. SPECK, Appl. Phys. Lett. 72, 2247 (1998).