Structural properties of GaN epilayers directly grown on on-axis 6H-SiC(0 0 0 1) by plasma-assisted MBE

Journal of Crystal Growth

Volumn 201, Issue , 1999, Pages 407-410

  Trampert, A ^a   Brandt, O ^a   Yang, B ^a   Jenichen, B ^a   Ploog, Klaus H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; CRYSTAL ORIENTATION; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PLASMA APPLICATIONS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SILICON CARBIDE; TRANSMISSION ELECTRON MICROSCOPY;

PLASMA-ASSISTED MOLECULAR BEAM EPITAXY (PA-MBE);

SEMICONDUCTING FILMS;

EID: 0032630695     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)01363-3     Document Type: Article

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