Gallium nitride thin layers via a liquid precursor route

Journal of Crystal Growth

Volumn 208, Issue 1, 2000, Pages 153-159

  Puchinger, Manfred ^a   Wagner, Thomas ^a   Rodewald, Dieter ^a   Bill, Joachim ^a   Aldinger, Fritz ^a   Lange, Frederick F ^b  

^a MAX PLANCK INSTITUTE FOR INTELLIGENT SYSTEMS   (Germany)

^b University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; AMMONIA; DEPOSITION; FILM GROWTH; HEAT TREATMENT; MORPHOLOGY; NITRIDES; PYROLYSIS; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; THIN FILMS;

CHEMICAL SOLUTION DEPOSITION; GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0033889911     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00416-9     Document Type: Article

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