Photoluminescence characterization of GaN thin film grown by atmospheric pressure organometallic vapor phase epitaxy

Materials Science and Engineering B

Volumn 48, Issue 3, 1997, Pages 205-210

  Liao, S M ^a   Wen, J H ^a   Chou, W C ^a   Lan, S M ^b  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

Author keywords

Gallium nitride (GaN); Organometallic vapor phase epitaxy (OMVPE); Photoluminescence (PL)

Indexed keywords

FILM GROWTH; LUMINESCENCE; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES; TEMPERATURE; VAPOR PHASE EPITAXY;

AMMONIA TRIMETHYL GALLIUM MASS FLOW RATIO; BASAL PLANE SAPPHIRE SUBSTRATES; BUFFER LAYER; GALLIUM NITRIDE; GROWTH TEMPERATURE; ORGANOMETALLIC VAPOR PHASE EPITAXY;

THIN FILMS;

EID: 0004287987     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(97)00047-0     Document Type: Article

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