Modelling of the defect structure in GaN MOCVD thin films by X-ray diffraction

Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Volumn 59, Issue 1-3, 1999, Pages 198-201

  Huet, F ^a   Di Forte Poisson, M A ^a   Romann, A ^a   Tordjman, M ^a   Di Persio, J ^b   Pecz, B ^c  

^a THALES   (France)

^b UNIV LILLE   (France)

^c RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; DENSITY (SPECIFIC GRAVITY); DISLOCATIONS (CRYSTALS); GALLIUM COMPOUNDS; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PARTICLE SIZE ANALYSIS; REFLECTION; SAPPHIRE; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

CRYSTALLINE QUALITY; FULL WIDTH AT HALF MAXIMUM; GALLIUM NITRIDES; HIGH RESOLUTION X RAY DIFFRACTION; HORDON AND AVERBACH MODEL; NOMARSKI MICROSCOPY;

THIN FILMS;

EID: 0033528893     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00390-0     Document Type: Article

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