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Materials Chemistry and Physics

Volumn 72, Issue 2, 2001, Pages 240-244

Effect of dilution gas on SiCN films growth using methylamine

(7) Wu, J J a Chen, K H a Wen, C Y b Chen, L C b Yu, Y C c Wang, C W c Lin, E K c

a INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES (Taiwan)

b NATIONAL TAIWAN UNIVERSITY (Taiwan)

c INSTITUTE OF PHYSICS (Taiwan)

Author keywords

Chemical vapor deposition; Hardness; Rutherford backscattering spectroscopy

Indexed keywords

CARBON NITRIDE; ELECTRON CYCLOTRON RESONANCE; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON NITRIDE; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

DILUTION GASES; OPTICAL EMISSION;

AMORPHOUS FILMS;

EID: 0035501067 PISSN: 02540584 EISSN: None Source Type: Journal
DOI: 10.1016/S0254-0584(01)00445-X Document Type: Article

Times cited : (6)

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