Methylamine growth of SiCN films using ECR-CVD

Materials Research Society Symposium - Proceedings

Volumn 606, Issue , 2000, Pages 115-120

  Wen, C Y ^a   Wu, J J ^b   Lo, H J ^c   Chen, L C ^a   Chen, K H ^b   Lin, S T ^c   Yu, Y C ^d   Wang, C W ^d   Lin, E K ^d  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

^d INSTITUTE OF PHYSICS   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; CRYSTAL STRUCTURE; ENERGY GAP; FILM GROWTH; HIGH RESOLUTION ELECTRON MICROSCOPY; OPTOELECTRONIC DEVICES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

METHYL AMIDE; PIEZOREFLECTANCE SPECTROSCOPY; SILICON CARBON NITRIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033678032     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (19)

1. L.C. Chen, C.K. Chen, S.L. Wei, D.M. Bhusari, K.H. Chen, Y.F. Chen, Y.C. Jong and Y.S Huang Appl. Phys. Lett. 72, p. 2463 (1998).
2. G. Sato, E.C. Samano, R. Machorro and L. Cota J. Vac. Sci. Technol. A 16, p. 1311 (1998).
3. F.J. Gomez, P. Prieto, E. Elizalde and J. Piqueras Appl. Phys. Lett. 69, p. 773 (1996).
4. L.C. Chen, C.Y. Yang, D.M. Bhusari, K.H. Chen, M.C. Lin, J.C. Lin, and T.J. Chuang Diamond and Related Mater. 5, p. 514 (1996).
5. L.C. Chen, D.M. Bhusari, C.Y. Yang, K.H. Chen, T.J. Chuang, M.C. Lin, C.K. Chen, and Y.F. Huang Thin Solid Films 303, p. 66 (1997).
6. G. Viera, J.L. Andujar, S.N. Sharma and E. Bertran Diamond and Related Mater. 7, p. 407 (1998).
7. A. Badzian, T. Badzian, W.D. Drawl, and R. Roy Diamond and Related Mater. 7, p. 1519 (1998).
8. R. Riedel, A. Greiner, G. Miehe, W. Dressler, H. Fuess, J. Bill and F. Aldinger, Angew Chem. Int. Ed. Engl. 36, p. 603 (1997).
9. K.H. Chen, J.-J. Wu, C.-Y. Wen, L.C. Chen, C.-W. Fan, P.-F. Kuo, Y.-F. Chen, Y.-S. Huang, Thin Solid Films 355-356, p. 203 (1999).
10. J.-J. Wu, K.H. Chen, C.-Y. Wen, L.C. Chen, J.K. Wang, Y.-C. Yu, C.-W. Wang, and E.-K. Lin, submitted to J. Chem. Mater.
11. J.-J. Wu, K.H. Chen, C.-Y. Wen, L.C. Chen, X.-J. Guo, II.J. Lo, S.T. Lin, Y.-C. Yu, C.-W. Wang, and E.-K. Lin, accepted by Diamond and Related Mater.
12. Y. Feng, Z. Zhou, Y. Zhou, G. Zhao Nul. Instr. and Meth. B 86, p. 225 (1994).
13. Y. Feng, Z. Zhou, G. Zhao, F. Yang Nul. Instr. and Meth. B 94, p. 11 (1994).
14. P. Y. Yu, M. Cardona, Fundamentals of Semiconductors, Springer, Berlin, 1996, pp. 307.
15. D.Y. Lin, C.F. Li, Y.S. Huang, Y.C. Jong, Y.F. Chen, L.C. Chen, C.K. Chen, K.H. Chen, D.M. Bhusari, Phys. Rev. B 56, p. 6498 (1997).
16. F. Westly, D.H. Frizzell, J.T. Herron, R.F. Hampson, W.G. Mallard NIST Chemical Kinetics Database, Version 6.01, U.S. Department of Commerce, Technology Administration, National Institute of Standards and Technology, Standard Reference Data Program: Gaithersburg, MD.
17. D. Marton, K.J. Boyd, A.M. Al-Bayati, S.S. Todorov, J.W. Rabalais Phys. Rev. Lett. 73, p. 118 (1994).
18. L. Kubler, J.L. Bischoff, and D. Bolmont Phys. Rev. B 38, p. 13113 (1988).
19. C.H. Hsieh, Y.S. Huang, K.K. Tiong, C.W. Fan, Y.F. Chen, L.C. Chen, J.J. Wu, and K.H. Chen, accepted by J. Appl. Phys. (1999).