A model of charge collection for irradiated p+n detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 473, Issue 1-2, 2001, Pages 128-135

  Marti i Garcia S ^a   Allport, P P ^a   Casse, G ^a   Greenall, A ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON TRAPS; PROTON IRRADIATION; PROTONS; SILICON;

SILICON DETECTORS;

RADIATION DETECTORS;

EID: 0035500648     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(01)01133-0     Document Type: Conference Paper

References (22)

1. A comparative study of oxygenated and non-oxygenated Si pad diodes, miniature and large area microstrip detectors
2. Determination of effective trapping times for electrons and holes in irradiated silicon