Annealing effects on irradiated n+n silicon detectors

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 420, Issue 3, 1999, Pages 473-480

  Allport, P P ^a   Booth, P S L ^a   Green, C ^a   Greenall, A ^a   Jackson, J N ^a   Jones, T J ^a   Richardson, J D ^a   Marti I Garcia S ^a   Smith, N A ^a   Turner, P R ^a   Wormald, M P ^a  

^a UNIVERSITY OF LIVERPOOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COLLIDING BEAM ACCELERATORS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; PROTON IRRADIATION; RADIATION EFFECTS; SIGNAL TO NOISE RATIO; SILICON SENSORS;

CHARGE COLLECTION EFFICIENCY; SILICON DETECTORS;

NEUTRON DETECTORS;

EID: 0032762472     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-9002(98)01202-9     Document Type: Article

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