Unintentional incorporation of B, As, and O impurities in GaN grown by molecular beam epitaxy

Journal of Electronic Materials

Volumn 30, Issue 10, 2001, Pages 1343-1347

  Kim, H ^a   Falth F J ^a   Andersson, T G ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

GaN; Impurities; MBE; Secondary ion mass spectrometry

Indexed keywords

CONTAMINATION; CRYSTALLINE MATERIALS; GROWTH (MATERIALS); LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; PLASMA SOURCES; SECONDARY ION MASS SPECTROMETRY;

BUFFER LAYERS;

GALLIUM NITRIDE;

EID: 0035484298     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-001-0122-z     Document Type: Article

References (27)