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Japanese Journal of Applied Physics, Part 2: Letters

Volumn 36, Issue 11 SUPPL. B, 1997, Pages

Growth of Ga1-xBxN by molecular beam epitaxy

(4) Vezin, Vincent a Yatagai, Satoshi a Shiraki, Hiroyuki a Uda, Satoshi a

a MITSUBISHI MATERIALS CORPORATION (Japan)

Author keywords

Electron probe microanalysis; Gallium boron nitride; Molecular beam epitaxy; Phase separation; X ray diffraction

Indexed keywords

CHEMICAL BONDS; CRYSTAL LATTICES; FILM GROWTH; MICROANALYSIS; MOLECULAR BEAM EPITAXY; NITRIDES; PHASE SEPARATION; SEMICONDUCTOR GROWTH; SILICON CARBIDE; SUBSTRATES; X RAY DIFFRACTION ANALYSIS;

ELECTRON PROBE MICROANALYSIS; GALLIUM BORON NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031274459 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.l1483 Document Type: Article

Times cited : (25)

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