Molecular beam epitaxy growth of boron-containing nitrides

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 3, 1999, Pages 1246-1248

  Gupta, V K ^a  

^a UNIVERSITY OF ROCHESTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 22644452352     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.590731     Document Type: Article

References (4)

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3. A. Y. Polyakov, M. Shin, W. Qian, M. Skorwronski, D. W. Greve, and R. G. Wilson, J. Appl. Phys. 81, 1715 (1997).
4. G. B. Stringfellow, J. Electron. Mater. 11, 903 (1982).