Nitrogen doping of ZnSe and CdTe epilayers: A comparison of two rf sources

Journal of Electronic Materials

Volumn 27, Issue 6, 1998, Pages 756-762

  Moldovan, M ^a   Hirsch, L S ^a   Ptak, A J ^a   Stinespring, C D ^b   Myers, T H ^a   Giles, N C ^a  

^a WEST VIRGINIA UNIVERSITY   (United States)

^b West Virginia University   (United States)

Author keywords

CdTe:N; Nitrogen doping; p type doping; Photoluminescence; ZnSe:N

Indexed keywords

EID: 0006848808     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0049-8     Document Type: Review

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