Selective Si epitaxial growth technique employing atomic hydrogen and substrate temperature modulation

Applied Physics Letters

Volumn 79, Issue 14, 2001, Pages 2181-2183

  Schroeder, T W ^a   Ma, P F ^a   Lam, A M ^a   Zheng, Y J ^a   Engstrom, J R ^a  

^a School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035475419     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1408271     Document Type: Article

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