Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: experimental data. I. Deposition parameters

Journal of the Electrochemical Society

Volumn 147, Issue 5, 2000, Pages 1847-1853

  Soman, R ^a   Reisman, A ^a   Temple, D ^a,b   Alberti, R ^b  

^a North Carolina State University   (United States)

^b MCNC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHEMICAL REACTIONS; GERMANIUM COMPOUNDS; HYDROGEN; OXIDES; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON COMPOUNDS; SILICON COMPOUNDS; SILICON WAFERS; THERMODYNAMICS; THIN FILMS;

ALTERNATING CYCLIC METHOD; GERMANIUM TETRACHLORIDE; SELECTIVE AREA CHEMICAL VAPOR DEPOSITION; SILICON TETRACHLORIDE;

CHEMICAL VAPOR DEPOSITION;

EID: 0033728980     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1393445     Document Type: Article

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