The effect of coincident atomic hydrogen on the gas-source molecular beam epitaxial growth of silicon from disilane

Surface Science

Volumn 470, Issue 1-2, 2000, Pages 131-140

  Zheng, Y J ^a,b   Engstrom, J R ^a   Zhang, J ^b   Schellinger, A ^a   Joyce, B A ^b  

^a Cornell University   (United States)

^b IMPERIAL COLLEGE LONDON   (United Kingdom)

Author keywords

Adsorption kinetics; Growth; Hydrogen atom; Models of surface kinetics; Reflection high energy electron diffraction (RHEED); Reflection spectroscopy; Silicon; Single crystal surfaces

Indexed keywords

ANISOTROPY; DESORPTION; DISSOCIATION; GAS ADSORPTION; HYDROGEN; LIGHT REFLECTION; MOLECULAR BEAM EPITAXY; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SILANES; SINGLE CRYSTALS;

REFLECTION SPECTROSCOPY;

SILICON;

EID: 0034498393     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(00)00848-7     Document Type: Article

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