Reduction of Source/Drain Series Resistance and Its Impact on Device Performance for PMOS Transistors with Raised Si1-x Gex Source/Drain

IEEE Electron Device Letters

Volumn 21, Issue 9, 2000, Pages 448-450

  Huang, Hsiang Jen ^a   Chen, Kun Ming ^a   Chang, Chun Yen ^a   Chen, Liang Po ^b   Huang, Guo Wei ^b   Huang, Tiao Yuan ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

RSD MOSFET; selective epitaxial growth; source and drain series resistance ((RSD); strained Si1 x Gex; ultra high vacuum chemical vapor deposition

Indexed keywords

EID: 85008062090     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.863107     Document Type: Article

References (11)

1. Y.-S. Chieh, A. Y. Perera, and P. Krusius, “Series resistance of silicided ohmic contacts for nanoelectronics,” IEEE Trans. Electron Devices, vol. 39, pp. 1882-1890, Aug. 1992.
2. R. B. Fair and G. A. Ruggles, “Thermal budget issues for deep submicron ULSI,” Solid State Technol., vol. 1990, p. 107, 1990.
3. M. Ono et al., “Sub-50 nm gate length n-MOSFET's with 10 nm phosphorus source and drain junction,” in IEDM Tech. Dig., 1993, pp. 119-122.
4. J. Sakano and S. Furukawa, “Study of shallow p n junction formation using SiGe/Si system,” Jpn. J. Appl. Phys., vol. 32, pp. 6163-6167, 1993.
5. F. S. Johnson, D. S. Miles, D. T. Grider, and J. J. Wortman, “Selective chemical etching of polycrystalline SiGe alloys with respect to Si and SiO,” J. Electron. Mater., vol. 21, pp. 805-810, 1992.
6. V. Aubry, F.Meyer, P.Warren, and D. Dutartre, “Schottky barrier heights of W on Si Ge alloys,” Appl. Phys. Lett., vol. 63, pp. 2520-2522, 1993.
7. H. Shinoda et al., “Electrical properties of metal/Si Ge /Si(100) heterojunctions,” Appl. Surf. Sci., vol. 100/101, pp. 526-529, 1996.
8. T. Uchino et al., “Araised source/drain technology using in-situ P-doped SiGe and B-doped Si for 0.1 um CMOS ULSIs,” in IEDM Tech. Dig., 1997, pp. 479-482.
9. M. Arienzo et al., “Si-Ge alloys: Growth, properties and applications,” Appl. Surf. Sci., vol. 48/49, pp. 377-386, 1991.
10. C. G. Van de Walle and R. Martin, “Theoretical calculations of heterojunction discontinuities in the Si/Ge system,” Phys. Rev. B, vol. 34, pp. 5621-5634, 1986.
11. Y. Taur et al., “A new “shift and ratio” method for MOSFET channellength extraction,” IEEE Electron Device Lett., vol. 13, pp. 267-269, 1992.