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IEEE Journal of Quantum Electronics

Volumn 37, Issue 9, 2001, Pages 1194-1202

1.55-μm buried-heterostructure VCSELs with InGaAsP/InP-GaAs/AlAs DBRs on a GaAs substrate

(6) Ohiso, Y a Okamoto, H a Iga Ryuzo, a Kishi, K a Tateno, K a Amano, C a

a NTT CORPORATION (Japan)

Author keywords

Buried heterostructure; Semiconductor lasers; Vertical cavity surface emitting lasers (VCSELs); Wafer bonding

Indexed keywords

CURRENT DENSITY; ELECTRIC RESISTANCE; HETEROJUNCTIONS; HIGH TEMPERATURE OPERATIONS; LASER MODES; MIRRORS; OPTICAL RESOLVING POWER; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; THIN FILMS;

BURIED HETEROSTRUCTURE; DISTRIBUTED BRAGG REFLECTORS; THIN FILM WAFER FUSION TECHNOLOGY; THRESHOLD CURRENT; VERTICAL CAVITY SURFACE EMITTING LASERS; WAFER BONDING;

SEMICONDUCTOR LASERS;

EID: 0035444698 PISSN: 00189197 EISSN: None Source Type: Journal
DOI: 10.1109/3.945325 Document Type: Article

Times cited : (16)

References (30)

1
- 0035809494
- 88°C continuous-wave operation of apertured, intracavity contacted, 1.55 μm vertical-cavity surface-emitting lasers
- (2001) Appl. Phys. Lett. , vol.78 , pp. 1337-1339
- Nakagawa, S.¹ Hall, E.² Almuneau, G.³ Kim, J.K.⁴ Buell, D.A.⁵ Kroemer, H.⁶ Coldren, L.A.⁷

2
- 0033882911
- Room-temperature operation of index-guided 1.55 μm InP-based vertical-cavity surface-emitting laser
- (2000) Electron. Lett. , vol.36 , pp. 437-439
- Ortsiefer, M.¹ Shau, R.² Bohm, G.³ Kohler, F.⁴ Amann, M.-C.⁵

3
- 0034313984
- Superlattice barrier 1528 nm vertical-cavity surface-emitting laser with 85°C continuous-wave operation
- (2000) IEEE Photon. Technol. Lett. , vol.12 , pp. 1438-1400
- Karim, A.¹ Black, K.A.² Abraham, P.³ Lofgreen, D.⁴ Chiu, Y.J.⁵ Piprek, J.⁶ Boweres, J.E.⁷

4
- 0030217345
- Submilliamp long wavelength vertical cavity lasers
- (1996) Electron. Lett. , vol.32 , pp. 2145-2146
- Margalit, N.M.¹ Babic, D.I.² Streubel, K.³ Mirin, R.P.⁴ Maone, R.L.⁵ Bowers, J.E.⁶ Hu, E.L.⁷

5
- 0031104074
- 1.54 μm vertical-cavity surface-emitting laser transmission at 2.5 Gb/s
- (1997) IEEE Photon. Technol. Lett. , vol.9 , pp. 374-376
- Zhang, S.Z.¹ Margalit, N.M.² Reynolds, T.E.³ Boweres, J.E.⁴

6
- 0003445408
- 50 km error-free 10 Gbit/s WDM transmission using directly modulated long-wavelength VCSEL's
- (1998) IEEE Photon. Technol. Lett. , vol.9 , pp. 1202-1204
- Stone, R.J.¹ Nabiev, R.F.² Boucart, J.³ Yuen, W.⁴ Kner, P.⁵ Li, G.S.⁶ Carico, R.⁷ Scheffel, L.⁸ Jansen, M.⁹ Worland, D.P.¹⁰ Chang-Hasnain, C.J.¹¹

7
- 0033719394
- High-performance 1.6 μm single-epitaxy top-emitting VCSEL
- (2000) Electron. Lett. , vol.36 , pp. 1121-1123
- Yuen, W.¹ Li, G.S.² Nabiev, R.F.³ Boucart, J.⁴ Kner, P.⁵ Stone, R.J.⁶ Zhang, D.⁷ Beaudoin, M.⁸ Zheng, T.⁹ He, C.¹⁰ Chang-Hasnain, C.J.¹¹

8
- 0032684040
- 1-mW CW-RT monolithic VCSEL at 1.55 μm
- (1999) IEEE Photon. Technol. Lett. , vol.11 , pp. 629-631
- Boucart, J.¹ Starck, C.² Gaborit, F.³ Plais, A.⁴ Bouche, N.⁵ Derouin, E.⁶ Goldstein, L.⁷ Fortin, C.⁸ Carpentier, D.⁹ Salet, P.¹⁰ Brillouet, F.¹¹ Jacquet, J.¹²

9
- 0031075511
- Continuous-wave operation up to 36°C of 1.3 μm GaInAsP-InP vertical-cavity surface-emitting lasers
- (1997) IEEE Photon. Technol. Lett. , vol.9 , pp. 141-142
- Uchiyama, S.¹ Yokouchi, N.² Ninomiya, T.³

10
- 0027599474
- Near room temperature continuous wave lasing characteristics of GaInAsP/InP surface emitting lasers
- (1993) Electron. Lett. , vol.29 , pp. 913-914
- Baba, T.¹ Yogo, Y.² Suzuki, K.³ Koyama, F.⁴ Iga, K.⁵

11
- 0032162538
- Current spreading and carrier diffusion in long-wavelength vertical-cavity surface-emitting lasers
- (1998) IEEE Photon. Technol. Lett. , vol.9 , pp. 1202-1204
- Xiong, Y.¹ Lo, Y.H.²

12
- 0000529382
- Low threshold buried heterostructure vertical cavity surface emitting laser
- (1993) Appl. Phys. Lett. , vol.63 , pp. 1307-1309
- Chang-Hasnain, C.J.¹ Wu, Y.A.² Li, G.S.³ Hasnain, G.⁴ Choquete, K.D.⁵ Caneau, C.⁶ Florez, L.T.⁷

13
- 0030681941
- Temperature performance of 1.55 μm vertical cavity lasers with integrated InP/GaInAsP Bragg reflector
- Proc. 9th Int. Conf. IPRM '97, 1997 , pp. 36-39
- Rapp, S.¹ Piprek, J.² Streubel, K.³ Andre, J.⁴ Messmer, E.R.⁵ Wallin, J.⁶

14
- 0032186783
- Long-wavelength vertical-cavity lasers with InGaAsP/InP-GaAs/AlAs DBR's by wafer fusion
- (1998) IEEE J. Quantum Electron. , vol.34 , pp. 1904-1913
- Ohiso, Y.¹ Amano, C.² Itho, Y.³ Takenouchi, H.⁴ Kurokawa, T.⁵

15
- 0000608111
- Thin-film wafer fusion for buried-heterostructure InP-based lasers fabricated on a GaAs substrate
- (2000) J. Appl. Phys. , vol.87 , pp. 2857-2866
- Ohiso, Y.¹ Amano, C.²

16
- 0000233077
- 1-xAs/GaAs mirrors for vertical-cavity surface-emitting lasers
- (1994) J. Vac. Sci. Technol. B. , vol.12 , pp. 3075-3083
- Peters, M.G.¹ Thibeault, B.J.² Young, D.B.³ Gossard, A.C.⁴ Coldren, L.A.⁵

17
- 0029343652
- Optimization of planar be-doped InGaAs VCSELs with two-sided output
- (1995) IEEE Photon. Technol. Lett. , vol.7 , pp. 730-732
- Reiner, G.¹ Zeeb, E.² Moller, B.³ Ries, M.⁴ Ebelinng, K.J.⁵

18
- 0031559297
- InGaAs/InGaAsP/InP edge emitting laser diodes on p-GaAs substrates obtained by localized wafer fusion
- (1997) Electron. Lett. , vol.33 , pp. 866-868
- Syrbu, A.V.¹ Fernandez, J.² Behrend, J.³ Berseth, C.A.⁴ Carlin, J.F.⁵ Rudra, A.⁶ Kapon, E.⁷

19
- 0003326471
- Estimation of diffraction loss in surface emitting laser cavity by beam propagation method
- (1989) Trans. IEICE , vol.72 E , pp. 1050-1051
- Simizu, M.¹ Koyama, F.² Iga, K.³

20
- 0031258025
- Transverse mode characteristics of vertical-cavity surface-emitting lasers buried in amorphous GaAs antiguide layer
- (1997) IEEE J. Quantum Electron. , vol.33 , pp. 1794-1800
- Yoo, B.S.¹ Chu, H.Y.² Park, H.³ Lee, H.G.⁴ Lee, J.⁵

21
- 33748656632
- Resonant modes of a master interferometer
- (1961) J. Bell Syst. Tech. , vol.40 , pp. 453-488
- Fox, A.G.¹ Li, T.²

22
- 0029239273
- MOVPE - Overgrowth for buried InP/(In, Ga) (As, P) laser diode arrays
- WP 55
- Proc. 7th Int. Conf. IPRM '95, 1995 , pp. 287-290
- Knauer, A.¹ Vogel, K.² Zeimer, U.³ Pittroff, W.⁴ Weyers, M.⁵ Wolter, P.⁶

23
- 0028482606
- Carrier transport in p-type GaInAsP/InP distributed Bragg reflectors
- (1994) Jpn. J. Appl. Phys. , vol.33 , pp. 4614-4616
- Miyamoto, T.¹ Mori, K.² Maekawa, H.³ Inaba, Y.⁴ Koyama, F.⁵ Iga, K.⁶

24
- 0003329093
- Effects of nonuniform current injection in GaInAsP/InP vertical-cavity lasers
- (1992) Appl. Phys. Lett. , vol.60 , pp. 2974-2976
- Wada, H.¹ Babic, D.I.² Ishikawa, M.³ Bowers, J.E.⁴

25
- 0021204984
- Variation of intervalence band absorption with hole concentration in P-type InP
- (1984) Appl. Phys. Lett. , vol.44 , pp. 82-83
- Casey H.C., Jr.¹ Carter, P.L.²

26
- 0034268608
- Pulse operation and threshold characteristics of 1.55 μm InAlGaAs-InAlAs VCSEL's
- (2000) IEEE Photon. Technol. Lett. , vol.9 , pp. 1132-1134
- Kwon, O.-K.¹ Yoo, B.S.² Shin, J.-H.³ Baek, J.-H.⁴ Lee, B.⁵

27
- 0031213268
- Design and analysis of double-fused 1.55 μm vertical-cavity lasers
- (1997) IEEE J. Quantum Electron. , vol.33 , pp. 1369-1383
- Babic, D.I.¹ Piprek, J.² Streubel, K.³ Mirin, R.P.⁴ Margalit, N.M.⁵ Mars, D.E.⁶ Bowers, J.E.⁷ Hu, E.L.⁸

28
- 0032047841
- Minimum temperature sensitivity of 1.55 μm vertical-cavity lasers at -30 nm gain offset
- (1998) Appl. Phys. Lett. , vol.72 , pp. 1814-1816
- Piprek, J.¹ Akulova, Y.² Babic, D.I.³ Coldren, L.A.⁴ Bowers, J.E.⁵

29
- 0034314010
- 90°C continuous-wave operation of 1.83 μm vertical-cavity surface-emitting lasers
- (2000) IEEE Photon. Technol. Lett. , vol.12 , pp. 1435-1437
- Ortsiefer, M.¹ Shau, R.² Bohm, G.³ Zigldrum, M.⁴ Rosskopf, J.⁵ Kohler, F.⁶ Amann, M.-C.⁷

30
- 0030170349
- Top surface-emitting vertical-cavity laser diodes for 10-Gb/s data transmission
- (1996) IEEE Photon. Technol. Lett. , vol.8 , pp. 746-748
- Fiedler, U.¹ Reiner, G.² Schnitzer, P.³ Ebeling, K.J.⁴

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