Room-temperature operation of index-guided 1.55 μm InP-based vertical-cavity surface-emitting laser

Electronics Letters

Volumn 36, Issue 5, 2000, Pages 437-439

  Ortsiefer, M ^a   Shau, R ^a   Bohm G ^a   Kohler F ^a   Amann, M C ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; LASER PULSES; MIRRORS; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; THRESHOLD VOLTAGE; TUNNEL JUNCTIONS;

DISTRIBUTED BRAGG REFLECTOR (DBR); VERTICAL CAVITY SURFACE EMITTING LASERS (VCSEL);

SEMICONDUCTOR LASERS;

EID: 0033882911     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20000397     Document Type: Article

References (6)

1. KIM, J.K., HALL, E., SJÖLUND, O., ALMUNEAL, G., and COLDREN, L.A.: 'Room-temperature, electrically-pumped multiple-active-region VCSELs with high differential efficiency at 1.55μm', Electron. Lett., 1999, 35, (13), pp. 1084-1085
2. BOUCART, J., STARCK, C., GABORIT, F., PLAIS, A., and JACQUET, J.: 'Metamorphic DBR and tunnel-junction injection: a CW RT monolithic long-wavelength VCSEL', IEEE J. Sel. Top. Quantum Electron., 1999, 5, (3), pp. 520-529
3. ORTSIEFER, M., SHAU, R., BÖHM, G., and AMANN, M.-C.: 'Low-resistance InGaAs tunnel junctions on InP for long wavelength VCSELs'. Semiconductor and Integrated Optoelectronics (SIOE'99), Cardiff, Wales, April 1999
4. ARZBERGER, M., LOHNER, M., BÖHM, G., and AMANN, M.-C.: 'Low-resisitive p-side contacts for InP-based devices using buried InGaAs tunnel junction'. Electron. Lett., 2000, 36, (1), pp. 87-88
5. HADLEY, G.R. LEAR, K.L., WARREN, M.E., CHOQUETTE, K.D., SCOTT, J.W., and CORZINE, S.W.: 'Comprehensive numerical modeling of vertical-cavity surface-emitting lasers,', IEEE J. Quantum Electron., 1996, 32, (4), pp. 607-616
6. DEBRAY, J.P., SAGNES, I., LE ROUX, G., LEGAY, P., QUILLEC, M., KAZMIERSKI, C., MADANI, R., and PALMIER, J.F.: 'MOVPE growth of a monolithic VCSEL at 1.56μm in the InGaAlAs-InAlAs system lattice matched to InP', IEEE Photonics Technol. Lett., 1999, 11, (7), pp. 770-772