Superlattice barrier 1528-nm vertical-cavity laser with 85°C continuous-wave operation

IEEE Photonics Technology Letters

Volumn 12, Issue 11, 2000, Pages 1438-1440

  Karim, A ^a,d   Black, K A ^a,b   Abraham, P ^a,c,d   Lofgreen, D ^a,d   Chiu, Y J ^a,d   Piprek, J ^a,d   Bowers, J E ^a,d  

^a University of California   (United States)

^b Zaffire Inc   (United States)

^c JDS UNIPHASE   (United States)

^d IEEE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; VERTICAL CAVITY SURFACE EMITTING LASERS; WAFER BONDING;

CONTINUOUS WAVE LASERS; CRYSTAL DEFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIRRORS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR SUPERLATTICES;

SEMICONDUCTOR LASERS;

EID: 0034313984     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.887642     Document Type: Article

References (11)

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