Temperature performance of 1.55 μm vertical cavity lasers with integrated InP/GaInAsP Bragg reflector

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1997, Pages 36-39

  Rapp, S ^a   Piprek, J ^a   Streubel, K ^a   Andre, J ^a   Messmer, E Rodriguez ^a   Wallin, J ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; COST EFFECTIVENESS; GAIN MEASUREMENT; LASER TUNING; MATHEMATICAL MODELS; MATRIX ALGEBRA; MIRRORS; OPTICAL COMMUNICATION EQUIPMENT; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

BRAGG REFLECTORS; VERTICAL CAVITY LASERS (VCL);

SEMICONDUCTOR LASERS;

EID: 0030681941     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)