Transverse mode characteristics of vertical-cavity surface-emitting lasers buried in amorphous GaAs antiguide layer

IEEE Journal of Quantum Electronics

Volumn 33, Issue 10, 1997, Pages 1794-1800

  Yoo, Byueng Su ^a,b,c,d   Chu, Hye Yong ^a,e   Park, Hyo Hoon ^a,b,d,f,g   Lee, Hae Gwon ^a,h   Lee, Jaejin ^a,b,i,j  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b IEEE   (South Korea)

^c Seoul National University   (South Korea)

^d Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^e Kyung Hee University   (South Korea)

^f Kyungpook National University   (South Korea)

^g STANFORD UNIVERSITY   (United States)

^h Dongguk University   (South Korea)

ⁱ Kongju National Teacher's College   (South Korea)

^j MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

more..

Author keywords

Amorphous semiconductor materials; Finite difference methods; Laser modes; Semiconductor lasers; Surface emitting lasers

Indexed keywords

AMORPHOUS MATERIALS; ELECTRIC CURRENTS; FINITE DIFFERENCE METHOD; LIGHT EMISSION; LIGHT PROPAGATION; REFRACTIVE INDEX; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR LASERS;

ANTIGUIDE EFFECT; SURFACE EMITTING LASERS; TRANSVERSE MODE; VERTICAL CAVITY LASERS;

LASER MODES;

EID: 0031258025     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.631285     Document Type: Article

References (19)

1. K. Iga, F. Koyama, and S. Kinoshita, "Surface emitting semiconductor lasers," IEEE J. Quantum Electron., vol. 24, pp. 1845-1855, 1988.
2. Y. H. Lee, J. L. Jewell, A. Scherer, S. L. McCall, J. P. Harbison, and L. T. Florez, "Room-temperature continuous-wave vertical cavity single-quantum-well microlaser diodes," Electron. Lett., vol. 25, pp. 1377-1378, 1989.
3. R. S. Geels and L. A. Coldren, "Submilliamp threshold vertical-cavity laser diodes," Appl. Phys. Lett., vol. 57, pp. 1605-1607, 1990.
4. C. J. Chang-Hasnain, J. P. Harbison, G. Hasnain, A. C. Von Lehmen, L. T. Florez, and N. G. Stoffel, "Dynamic, polarization, and transverse mode characteristics of vertical cavity surface emitting lasers," IEEE J. Quantum Electron., vol. 27, pp. 1402-1409, 1991.
5. Y. J. Yang, T. G. Dziura, S. C. Wang, G. Du, and S. Wang, "Single-mode operation of mushroom structure surface emitting lasers," IEEE Photon. Technol. Lett., vol. 3, pp. 9-11, 1991.
6. Y. A. Wu, C. J. Chang-Hasnain, and R. Nabiev, "Single mode emission from a passive-antiguide-region vertical-cavity surface-emitting laser," Electron. Lett., vol. 29, pp. 1861-1863, 1993.
7. R. A. Morgan, G. D. Guth, M. W. Focht, M. T. Asom, K. Kojima, L. E. Rogers, and S. E. Callis, "Transverse mode control of verticalcavity top-surface-emitting lasers," IEEE Photon. Technol. Lett., vol. 4, pp. 374-377, 1993.
8. N. Matsumoto and K. Kumabe, "Amorphous GaAs films by molecular beam deposition," Jpn. J. Appl. Phys., vol. 19, pp. 1583-1590, 1980.
9. B.-S. Yoo, H.-H. Park, and E.-H. Lee, "Low threshold current density InGaAs surface-emitting lasers with periodic gain active structure," Electron. Lett., vol. 30, pp. 1060-1061, 1994.
10. H.-H. Park and B.-S. Yoo, "Low threshold current density and high efficiency surface-emitting lasers with a periodic gain active structure," ETRI J., vol. 17, pp. 1-10, 1995.
11. J. Y. Yoo, J. H. Shin, Y. H. Lee, H.-H. Park, and B.-S. Yoo, "Precise nonselective chemically assisted ion-beam etching of AlGaAs/GaAs Bragg reflectors by in situ laser reflectometry," Opt. Quantum Electron., vol. 27, pp. 421-425, 1995.
12. H.-H. Park, B.-S. Yoo, H. Y. Chu, M. S. Park, J. Lee, H. G. Lee, E.-H. Lee, J.-H. Shin, and Y. H. Lee, "Amorphous GaAs passivation of ionbeam-etched InGaAs vertical-cavity surface-emitting lasers," J. Korean Phys. Soc., vol. 29, pp. 522-525, 1996.
13. C. Molteni, L. Colombo, and L. Miglio, "Structure and properties of amorphous gallium arsenide by tight-binding molecular dynamics," Phys. Rev. B, vol. 50, pp. 4371-4377, 1994.
14. M. Shimizu, F. Koyama, and K. Iga, "Estimation of diffraction loss in surface emitting laser cavity by beam propagation method," Trans. IEICE, vol. E72, pp. 1050-1051, 1989.
15. Y. A. Wu, G. S. Li, R. F. Nabiev, K. D. Choquette, C. Caneau, and C. J. Chang-Hasnain, "Single-mode, passive antiguide vertical cavity surface emitting laser," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 629-637, 1995.
16. B.-S. Yoo, H. Y. Chu, M. S. Park, H.-H. Park, and E.-H. Lee, "Stable transverse mode emission in vertical-cavity surface-emitting lasers antiguided by amorphous GaAs layer," Electron. Lett., vol. 32, pp. 116-117, 1996.
17. D. L. Huffaker, D. G. Deppe, and T. J. Rogers, "Transverse mode behavior in native-oxide-defined low threshold vertical-cavity lasers," Appl. Phys. Lett., vol. 65, pp. 1611-1613, 1994.
18. J. W. Scott, R. S. Geels, S. W. Corzine, and L. A. Coldren, "Modeling temperature effects and spatial hole burning to optimize vertical-cavity surface-emitting laser performance," IEEE J. Quantum Electron., vol. 29, pp. 1295-1308, 1993.
19. S. Y. Hu, S. W. Corzine, K. K. Law, D. B. Young, A. C. Gossard, L. A. Coldren, and J. L. Merz, "Lateral carrier diffusion and surface recombination in InGaAs/AlGaAs quantum-well ridge-waveguide lasers," J. Appl. Phys., vol. 76, pp. 4479-4487, 1994.