메뉴 건너뛰기




Volumn 377-379, Issue , 1997, Pages 1-6

Ordering of vacancies on Si(001)

Author keywords

Low index single crystal surfaces; Scanning tunneling microscopy; Self assembly; Silicon; Surface energy; Surface stress; Surface thermodynamics

Indexed keywords

ANNEALING; ELECTRON ENERGY LEVELS; ETCHING; IMPURITIES; INTERFACIAL ENERGY; ION BOMBARDMENT; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS; STRESSES; SURFACES; THERMODYNAMICS;

EID: 4243333499     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(96)01316-7     Document Type: Article
Times cited : (30)

References (24)
  • 1
    • 0345158124 scopus 로고
    • P. Bedrossian and T. Klitsner, Phys. Rev. Lett. 68 (1992) 646; Phys. Rev. B 44 (1991) 13 783; P. Bedrossian and E. Kaxiras, Phys. Rev. Lett. 70 (1993) 2589.
    • (1992) Phys. Rev. Lett. , vol.68 , pp. 646
    • Bedrossian, P.1    Klitsner, T.2
  • 2
    • 0000544550 scopus 로고
    • P. Bedrossian and T. Klitsner, Phys. Rev. Lett. 68 (1992) 646; Phys. Rev. B 44 (1991) 13 783; P. Bedrossian and E. Kaxiras, Phys. Rev. Lett. 70 (1993) 2589.
    • (1991) Phys. Rev. B , vol.44 , pp. 13783
  • 3
    • 3342925848 scopus 로고
    • P. Bedrossian and T. Klitsner, Phys. Rev. Lett. 68 (1992) 646; Phys. Rev. B 44 (1991) 13 783; P. Bedrossian and E. Kaxiras, Phys. Rev. Lett. 70 (1993) 2589.
    • (1993) Phys. Rev. Lett. , vol.70 , pp. 2589
    • Bedrossian, P.1    Kaxiras, E.2
  • 7
    • 0000375991 scopus 로고
    • D. Rioux, M. Chander, Y.Z. Li and J.H. Weaver, Phys. Rev. B 49 (1994) 11 071; D. Rioux, R.J. Pechman, M. Chander and J.H. Weaver, Phys. Rev. B 50 (1994) 4430; D. Rioux, F. Stepniak, R.J. Pechman and J.H. Weaver, Phys. Rev. B 51 (1995) 10 981.
    • (1994) Phys. Rev. B , vol.49 , pp. 11071
    • Rioux, D.1    Chander, M.2    Li, Y.Z.3    Weaver, J.H.4
  • 8
    • 0001126052 scopus 로고
    • D. Rioux, M. Chander, Y.Z. Li and J.H. Weaver, Phys. Rev. B 49 (1994) 11 071; D. Rioux, R.J. Pechman, M. Chander and J.H. Weaver, Phys. Rev. B 50 (1994) 4430; D. Rioux, F. Stepniak, R.J. Pechman and J.H. Weaver, Phys. Rev. B 51 (1995) 10 981.
    • (1994) Phys. Rev. B , vol.50 , pp. 4430
    • Rioux, D.1    Pechman, R.J.2    Chander, M.3    Weaver, J.H.4
  • 9
    • 0001755142 scopus 로고
    • D. Rioux, M. Chander, Y.Z. Li and J.H. Weaver, Phys. Rev. B 49 (1994) 11 071; D. Rioux, R.J. Pechman, M. Chander and J.H. Weaver, Phys. Rev. B 50 (1994) 4430; D. Rioux, F. Stepniak, R.J. Pechman and J.H. Weaver, Phys. Rev. B 51 (1995) 10 981.
    • (1995) Phys. Rev. B , vol.51 , pp. 10981
    • Rioux, D.1    Stepniak, F.2    Pechman, R.J.3    Weaver, J.H.4
  • 15
    • 30244457953 scopus 로고    scopus 로고
    • note
    • Measuring the depth of such a narrow VLD with STM not only requires a very sharp tip but also electronical effects may play a role.
  • 21
    • 11944255842 scopus 로고
    • B.S. Swartzentruber et al., Phys. Rev. Lett. 65 (1990) 1913; H.J.W. Zandvliet et al., Phys. Rev. B 45 (1992) 5965.
    • (1990) Phys. Rev. Lett. , vol.65 , pp. 1913
    • Swartzentruber, B.S.1
  • 22
    • 0001108216 scopus 로고
    • B.S. Swartzentruber et al., Phys. Rev. Lett. 65 (1990) 1913; H.J.W. Zandvliet et al., Phys. Rev. B 45 (1992) 5965.
    • (1992) Phys. Rev. B , vol.45 , pp. 5965
    • Zandvliet, H.J.W.1
  • 23
    • 30244467888 scopus 로고    scopus 로고
    • note
    • A type step edge, respectively. In the absence of a stress component along the dimer direction the strain relaxation energy perpendicular to dimer bond is estimated to be only 6 meV/a (l = 2.5a and L = 5.2a).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.