Characterization of damage in InP dry etched using nitrogen containing chemistries

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 5, 2001, Pages 1905-1910

  Carlstrom C F ^a   Anand, S ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CURRENT VOLTAGE CHARACTERISTICS; DEFECTS; NITROGEN; PASSIVATION; PHOTOLUMINESCENCE; REACTIVE ION ETCHING; SPECTROSCOPIC ANALYSIS;

NITROGEN MILLING;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0035441548     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1403440     Document Type: Article

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