In situ UHV contactless C-V and XPS characterization of surface passivation process for InP using a partially nitrided Si interface control layer

Applied Surface Science

Volumn 166, Issue 1, 2000, Pages 526-531

  Takahashi, Hiroshi ^a   Hasegawa, Hideki ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE MEASUREMENT; ELECTRON CYCLOTRON RESONANCE; FERMI LEVEL; NITRIDING; NITROGEN; PASSIVATION; SEMICONDUCTING FILMS; SEMICONDUCTING SILICON; SEMICONDUCTOR PLASMAS; VACUUM; VOLTAGE MEASUREMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACE CONTROL LAYERS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0034301072     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00487-6     Document Type: Article

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