Blueshifting of InGaAsP-InP laser diodes using a low-energy ion-implantation technique: Comparison between strained and lattice-matched quantum-well structures

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 4, Issue 4, 1998, Pages 741-745

  Paquette, M ^b,d,e   Aimez, V ^a,b,f   Beauvais, J ^b,g,h,i   Beerens, J ^b,j,k   Poole, P J ^c,l   Charbonneau, S ^c,g,m,n,o   Roth, A P ^c  

^a IEEE

^b UNIVERSITÉ DE SHERBROOKE   (Canada)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

^d Gina Cody School of Engineering and Computer Science   (Canada)

^e INRS EMT   (Canada)

^f KINGSTON UNIVERSITY   (United Kingdom)

^g UNIVERSITY OF OTTAWA   (Canada)

^h UNIVERSITÉ LAVAL   (Canada)

ⁱ UNIVERSITY OF GLASGOW   (United Kingdom)

^j ÉCOLE POLYTECHNIQUE DE MONTRÉAL   (Canada)

^k ORANGE LABS   (France)

^l IMPERIAL COLLEGE LONDON   (United Kingdom)

^m SIMON FRASER UNIVERSITY   (Canada)

ⁿ Faculty of Science

^o NRC   (United Kingdom)

more..

Author keywords

III V semiconductors; InGaAsP InP laser diodes low energy ion implantation, quantum well intermixing, wavelength division multiplexing

Indexed keywords

ANNEALING; CRYSTAL LATTICES; DIFFUSION IN SOLIDS; ELECTROLUMINESCENCE; ION IMPLANTATION; POINT DEFECTS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR QUANTUM WELLS; WAVELENGTH DIVISION MULTIPLEXING;

QUANTUM-WELL INTERMIXING;

SEMICONDUCTOR LASERS;

EID: 0032121261     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.720487     Document Type: Review

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