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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 7 A, 1997, Pages 4235-4240

Electrical characteristics and the X-ray photoelectron spectroscopy of AlN/InP structure fabricated by helicon-wave-excited plasma nitridation of vacuum-evaporated Al

(4) Hayashi, Hidematsu a Hatanaka, Ichirou a Sato, Singo a Ikoma, Hideaki a

a TOKYO UNIVERSITY OF SCIENCE (Japan)

Author keywords

Al oxynitride; Al2O3; AlN; C V characteristics; Helicon wave excited plasma; I V characteristics; InP; Nitridation; X ray photoelectron spectroscopy

Indexed keywords

CAPACITANCE VOLTAGE CHARACTERISTICS; HELICON WAVE EXCITED PLASMA NITRIDATION; PLASMA TREATMENT;

CURRENT VOLTAGE CHARACTERISTICS; LEAKAGE CURRENTS; MIS DEVICES; PLASMAS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0031185875 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.36.4235 Document Type: Article

Times cited : (4)

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