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Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 6, 1999, Pages 2660-2663

Trimethylamine: Novel source for low damage reactive ion beam etching of InP

(3) Carlstrom C F a Anand, S a Landgren, G a

a ROYAL INSTITUTE OF TECHNOLOGY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040114973 PISSN: 10711023 EISSN: None Source Type: Journal
DOI: 10.1116/1.591043 Document Type: Article

Times cited : (4)

References (14)

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