SCOPUS 정보 검색 플랫폼

Surface Science

Volumn 488, Issue 1-2, 2001, Pages 133-140

Early stages of silicon nitride film growth studied by molecular dynamics simulations

(2) Guo, Xiang Yun a,b Brault, Pascal a

a UNIVERSITÉ D'ORLÉANS (France)

b INSTITUTE OF COAL CHEMISTRY (China)

Author keywords

Atom solid interaction; Clusters; Computer simulations; Growth; Molecular dynamics; Silicon nitride

Indexed keywords

AMORPHOUS SILICON; COMPUTER SIMULATION; DEPOSITION; FILM GROWTH; KINETIC ENERGY; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; MORPHOLOGY; RANDOM PROCESSES; THERMAL EFFECTS;

ATOM-SOLID INTERACTIONS;

SILICON NITRIDE;

EID: 0035426470 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(01)01129-3 Document Type: Article

Times cited : (11)

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