Electronic properties of silicon-nitride films deposited by low-energy ion-beam bombardment

Applied Physics A Materials Science & Processing

Volumn 61, Issue 6, 1995, Pages 643-644

  Ren, Zhong Min ^a   Lu, Fang ^a   Du, Yuan Cheng ^a   Ying, Zhi Feng ^a   Li, Fu Ming ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

41.75; 68.55; 73.61.Ng

Indexed keywords

CAPACITANCE; CHEMICAL CLEANING; CURRENT VOLTAGE CHARACTERISTICS; DEPOSITION; ELECTRONIC PROPERTIES; FILM PREPARATION; ION BOMBARDMENT; NITRIDING; SILICON NITRIDE; SILICON WAFERS; SURFACES; THERMOCOUPLES;

FLAT BAND CAPACITANCE; FLAT BAND VOLTAGE; INTERFACE STATES; LOW ENERGY NITROGEN ION BEAM BOMBARDMENT; ULTRATHIN SILICON NITRIDE FILMS;

ULTRATHIN FILMS;

EID: 0029536663     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/BF01542876     Document Type: Article

References (8)

1. Growth mechanism of thin oxide films under low-energy oxygen-ion bombardment
2. Characterization of ultrathin SiO2 films formed by direct low-energy ion-beam oxidation
3. Ion beam oxidation of GaAs: The role of ion energy
4. Thermal nitridation of Si and SiO2for VLSI