Processing and characterization of PECVD silicon nitride

Advanced Materials for Optics and Electronics

Volumn 6, Issue 3, 1996, Pages 147-150

  Zhang, Xiumiao ^a   Ding, Koubao ^a   Yang, Ailing ^a   Shao, Diling ^a  

^a ZHEJIANG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION; ELECTRIC PROPERTIES; FILM GROWTH; OPTICAL PROPERTIES; PLASMA APPLICATIONS; SILICON NITRIDE; SYNTHESIS (CHEMICAL); THERMAL EFFECTS;

CHEMICAL SPECIATION; FLOW RATIO; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POWER DENSITY;

AMORPHOUS FILMS;

EID: 0030142727     PISSN: 10579257     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1099-0712(199605)6:3<147::AID-AMO227>3.0.CO;2-G     Document Type: Article

References (9)