High fT 50-nm-gate InAlAs/InGaAs high electron mobility transistors lattice-matched to InP substrates

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 8 B, 2000, Pages

  Yamashita, Yoshimi ^c   Endoh, Akira ^c   Higashiwaki, Masataka ^b   Hikosaka, Kohki ^c   Mimura, Takashi ^c   Hiyamizu, Satoshi ^b   Matsui, Toshiaki ^a  

^a Ministry of Posts and Telecommunications   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; GATES (TRANSISTOR); SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SUBSTRATES;

CUTOFF FREQUENCY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0034245088     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l838     Document Type: Article

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