Nearly ideal InP/GaAsSb/InP double heterojunction bipolar transistors with ballistically launched collector electrons

Electronics Letters

Volumn 34, Issue 17, 1998, Pages 1700-1702

  Matine, N ^b   Dvorak, M W ^b   Bolognesi, C R ^b   Xu, X ^a   Hu, J ^a   Watkins, S P ^a   Thewalt, M L W ^a  

^a SIMON FRASER UNIVERSITY   (Canada)

^b NONE

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; VOLTAGE MEASUREMENT;

BALLISTICALLY ELECTRON LAUNCHER COLLECTORS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032136622     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19981160     Document Type: Article

References (5)

1. TIWARI, S.: 'A new effect at high currents in heterostructure bipolar transistors', IEEE Electron Device Lett., 1988, 9, pp. 142-144
2. HU, J., STOTZ, J.A.H., XU, X., WATKINS, S.P., THEWALT, M.L.W., and BOLOGNESI, C.R.: 'Type II photoluminescence and conduction band offsets of GaAsSb/InGaAs and GaAsSb/InP heterostructures grown by metalorganic vapor phase epitaxy', 1998, (submitted for publication)
3. BHAT, R., HONG, W.-P., CANEAU, C., KOZA, M.A., NGUYEN, C-K., and GOSWAMI, S.: 'Inp/GaAsSb/InP and InP/GaAsSb/InGaAsP double heterojunction bipolar transistors with a carbon-doped base grown by organometallic chemical vapor deposition', Appl. Phys. Lett., 1996, 68, pp. 985-987
4. MCDERMOTT, B.T., GERTNER, E.R., PITTMAN, S., SEABURY, C.W., and CHANG, M.F.: 'Growth and doping of GaAsSb via metalorganic chemical vapor deposition for InP heterojunction bipolar transistors', Appl. Phys. Lett., 1996, 68, pp. 1386-1388
5. MATINE, N., DVORAK, M.W., PELOUARD, J.L., PARDO, F., and BOLOGNESI, C.R.: 'InP in HBTs by vertical and lateral wet etching'. 10th Int. Conf. on Indium Phosphide and Related Materials, Tsukuba, Japan, 1998