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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 4 B, 2000, Pages 2325-2328

Single-electron transistor and current-switching device fabricated by vertical pattern-dependent oxidation

(7) Ono, Yukinori a Takahashi, Yasuo a Yamazaki, Kenji a Nagase, Masao a Namatsu, Hideo a Kurihara, Kenji a Murase, Katsumi a

a NTT Basic Research Laboratories (Japan)

Author keywords

Coulomb blockade; Nano structure; Oxidation; Si; Single electron transistor; SOI

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CONDUCTANCE; ELECTRIC CONDUCTIVITY OF SOLIDS; EQUIVALENT CIRCUITS; INTEGRATED CIRCUIT MANUFACTURE; LOGIC CIRCUITS; OXIDATION; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SWITCHING CIRCUITS;

COULOMB BLOCKADE; CURRENT SWITCHING DEVICE; SINGLE ELECTRON TRANSISTOR; VERTICAL PATTERN DEPENDENT OXIDATION;

TRANSISTORS;

EID: 0033723644 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/jjap.39.2325 Document Type: Article

Times cited : (17)

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