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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 1 B, 1999, Pages 410-414

Voltage Gain in GaAs-Based Lateral Single-Electron Transistors Having Schottky Wrap Gates

(5) Satoh, Yoshihiro a Okada, Hiroshi a Jinushi, Kei Ichiroh a Fujikura, Hajime a Hasegawa, Hideki a

a HOKKAIDO UNIVERSITY (Japan)

Author keywords

Coulomb blockade; GaAs; Potential simulation; Schottky wrap gate (WPG); Single electron transistor (SET); Voltage gain

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTRON TUNNELING; ELECTROSTATICS; GATES (TRANSISTOR); NANOTECHNOLOGY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WIRES;

COULOMB BLOCKADE; SCHOTTKY WRAP GATES; SINGLE ELECTRON TRANSISTORS (SET);

SEMICONDUCTOR QUANTUM DOTS;

EID: 0032607228 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.38.410 Document Type: Article

Times cited : (22)

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