Silicon on GaN(0001) and (0001) surfaces

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1619-1625

  Lee, C D ^a   Feenstra, R M ^a   Rosa, A L ^b   Neugebauer, J ^b   Northrup, J E ^c  

^a CARNEGIE MELLON UNIVERSITY   (United States)

^b FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

^c PALO ALTO RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMS; CALCULATIONS; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MONOLAYERS; MORPHOLOGY; REACTION KINETICS; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; SCANNING TUNNELING MICROSCOPY; SURFACE TREATMENT; SURFACES;

ADATOM KINETICS; FIRST PRINCIPLE CALCULATIONS; SURFACE RECONSTRUCTION;

SILICON;

EID: 0035412417     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1383074     Document Type: Article

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