Low-distortion GaAs-based field effect transistors with InGaP channel layer for high-voltage operation

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1998, Pages 63-66

  Hara, Naoki ^a   Nakasha, Yasuhiro ^a   Kikkawa, Toshihide ^a   Takahashi, Hidenod ^a   Joshin, Kazukiyo ^a   Watanabe, Yuu ^a   Tanaka, Hitoshi ^a   Takikawa, Masahiko ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; INTERMODULATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

INTERMODULATION DISTORTION;

FIELD EFFECT SEMICONDUCTOR DEVICES;

EID: 0032284163     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)